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SINGLE PHOTON DETECTOR BASED ON AVALANCHE PHOTODIODE ALINAS/INGAAS

SKU0009
DESCRIPTION

The single photon detector belongs to the field of signal detection and recording devices for applications in quantum communications and LIDAR systems. The device is distinguished by all the advantages of solid-state semiconductor devices: small geometric dimensions, low bias voltage, low power consumption, high strength and reliability.

CHARACTERISTICS

  • The dark current level is 10-20 nA (with an applied voltage of 0.9 of the breakdown voltage of -85 V) 
  • The spectral sensitivity of the devices in the range of 1550 nm is 0.85–0.88 A/Tue 
  • The value of the dark count speed parameter is 300 counts/s

ADVANTAGES OF THE DEVELOPMENT

  • Small geometric size
  • Low bias voltage
  • Low power consumption
  • Strength
  • Reliability

APPLICATION AREAS

  • Communications
  • Information technology
  • LIDAR systems

Image in an optical microscope of a fragment of the InAlAs/InGaAs LFD structure.