ORGANIC AND PEROVSKITE PHOTOMATERIALS FOR THE CREATION OF FLEXIBLE PHOTODIODES AND PHOTODETECTOR MATRICES
SKU0057
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DESCRIPTION
Matrix image sensors based on organic and perovskite semiconductors form photodiode pixels and integrate them with active pixel transistor arrays based on metal-oxide semiconductors (MOS-TFT). Thin-film transistor arrays (MOS-TFT), acting as an analog-to-digital integrated circuit for reading photo signals, open up new possibilities for using organic and perovskite materials in advanced optical imaging technologies. The developed matrix photodetector sensor is 400x400 pixels with a density of 508 ppi, suitable for optical fingerprint sensors and X-ray sensors. Economically efficient technologies for creating organic and perovskite photodiodes (PD) with improved absorption from the blue to the near-infrared (NIR up to 1200 nm) range are also presented, thanks to the use of dielectric resonant Si particles. In addition, the main operational parameters of the matrix photodetector sensor (MFD) are modeled, where the "1T-1C" architecture is proposed for the photodetector pixel model, which involves connecting a single transistor with a photodiode to the charge accumulation reading circuit and one charge capacitor.
ADVANTAGES OF THE DEVELOPMENT
Capability to manufacture flexible devices
Easy scalability
Ultra-thinness
Unique optical characteristics
The manufacturing process is compatible with continuous production technologies and has low cost